advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 1 0 5 10 15 20 25 30 35 0246810121416 frequency (ghz) maximum gain (db) mag msg dc - 20 ghz discrete power phemt TGF2022-06 key features and performance ? frequency range: dc - 20 ghz ? > 28 dbm nominal psat ? 58% maximum pae ? 36 dbm nominal oip3 ? 13 db nominal power gain ? suitable for high reliability applications ? 0.6mm x 0.35 m power phemt ? nominal bias vd = 8-12v, idq = 45-75ma (u nder rf drive, id rises from 45ma to 150ma) ? chip dimensions: 0.57 x 0.53 x 0.10 mm (0.022 x 0.021 x 0.004 in) primary applications ? point-to-point radio ? high-reliability space ? military ? base stations ? broadband wireless applications product description the triquint TGF2022-06 is a discrete 0.6 mm phemt which operates from dc-20 ghz. the TGF2022-06 is designed using triquints proven standard 0.35um power phemt production process. the TGF2022-06 typically provides > 28 dbm of saturated output power with power gain of 13 db. the maximum power added efficiency is 58% which makes the TGF2022-06 appropriate for high efficiency applications. the TGF2022-06 is also ideally suited for point-to-point radio, high-reliability space, and military applications. the TGF2022-06 has a protective surface passivation layer providing environmental robustness. lead-free and rohs compliant note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice.
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 2 table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 12.5 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current 282 ma 2/ | i g | gate supply current 7 ma p in input continuous wave power 23 dbm 2/ p d power dissipation see note 3 2/ 3 / t ch operating channel temperature 150 c 4/ t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ for a median life time of 1e+6 hrs, power dissipation is limited to: p d (max) = (150 c C tbase c) / 138.0 ( c/w) 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TGF2022-06 table ii dc probe characteristics (t a = 25 q c, nominal) symbol parameter minimum typical maximum unit idss saturated drain current - 180 - ma gm transconductance - 225 - ms v p pinch-off voltage -1.5 -1 -0.5 v v bgs breakdown voltage gate-source -30 - -14 v v bgd breakdown voltage gate-drain -30 - -14 v note: for triquints 0.35um power phemt devices, rf breakdown >> dc breakdown
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 3 table iii rf characterization table (t a = 25 c, nominal) symbol parameter f = 10 ghz f = 18 ghz units vd = 10v idq = 45 ma vd = 12v idq = 45 ma vd = 10v idq = 45 ma vd = 12v idq = 45 ma power tuned: psat pae gain rp 1/ cp 1/ g l 2/ saturated output power power added efficiency power gain parallel resistance parallel capacitance load reflection coefficient 28.9 52.4 12.9 44.63 0.276 0.382 e 120.1 29.6 51.9 12.9 56.99 0.257 0.400 e 104.7 28.1 41.5 8.3 43.55 0.415 0.522 e 127.7 28.7 37.0 8.0 48.44 0.432 0.556 e 125.1 dbm % db w pf - efficiency tuned: psat pae gain rp 1/ cp 1/ g l 2/ saturated output power power added efficiency power gain parallel resistance parallel capacitance load reflection coefficient 28.3 58.3 13 72.49 0.252 0.455 e 93.7 29.3 56.0 13 74.22 0.255 0.466 e 93.4 27.5 46.0 8.5 51.30 0.495 0.619 e 127.3 28.1 42.5 8.3 66.97 0.503 0.680 e 123.0 dbm % db w pf - oip3 output toi 37 36 37 36 dbm TGF2022-06 1/ large signal equivalent phemt output network 2/ optimum load impedance for maximum power or maximum pae at 10 and 18 ghz. the series resistance and inductance (rd and ld) shown in the figure on page 7 is excluded
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 4 measured fixtured data imd3 vs. output power/tone at 10 & 18 ghz table iv thermal information parameter test conditions t ch ( o c) t jc ( q c/w) t m (hrs) q jc thermal resistance (channel to backside of carrier) vd = 12 v idq = 45 ma pdiss = 0.54 w 145 138 1.6 e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. TGF2022-06 -70 -60 -50 -40 -30 -20 -10 0 7 8 9 10111213141516171819202122 output power/tone (dbm) imd3 (dbc) 18 ghz, vd=12v, id=45ma 18 ghz, vd=10v, id=45ma 10 ghz, vd=12v,id=45ma 10 ghz, vd=10v, id=45ma
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 5 TGF2022-06 measured fixtured data power tuned data at 10ghz efficiency tuned data at 10ghz for power tuned devices at 10ghz input matched for maximum gain & output load is: vd=12v, idq=45ma: rp = 57.0 w , cp = 0.257pf, g = 0.400, q = 104.7 vd=10v, idq=75ma: rp = 44.6 w , cp = 0.276pf, g = 0.382, q = 120.1 for efficiency tuned devices at 10ghz: input matched for maximum gain & output load is: vd=12v, idq=45ma: rp = 74.2 w , cp = 0.255pf, g = 0.466, q = 93.4 vd=10v, idq=45ma: rp = 72.5 w , cp = 0.252pf, g = 0.455, q = 93.7 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 8 9 10 11 12 13 14 15 16 17 18 19 20 input power (dbm) gain (db) 10 14 18 22 26 30 34 38 42 46 50 54 58 62 pae (%) vd = 12v, id = 45ma vd = 10v, id = 45ma 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 8 9 10 11 12 13 14 15 16 17 18 19 20 input power (dbm) gain (db) 10 14 18 22 26 30 34 38 42 46 50 54 58 62 pae (%) vd = 12v, id = 45ma vd = 10v, id = 45ma 10 12 14 16 18 20 22 24 26 28 30 32 8 9 10 11 12 13 14 15 16 17 18 19 20 input power (dbm) pout (dbm) 50 60 70 80 90 100 110 120 130 140 150 id (ma) vd = 12v, id = 45ma vd = 10v, id = 45ma 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 8 9 10 11 12 13 14 15 16 17 18 19 20 input power (dbm) pout (dbm) 50 60 70 80 90 100 110 120 130 140 150 160 170 180 id (ma) vd = 12v, id = 45ma vd = 10v, id = 45ma
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 6 TGF2022-06 measured fixtured data power tuned data at 18ghz efficiency tuned data at 18ghz for power tuned devices at 18ghz input matched for maximum gain & output load is: vd=12v, idq=45ma: rp = 48.4 w , cp = 0.432pf, g = 0. 556, q = 125.1 vd=10v, idq=75ma: rp = 43.5 w , cp = 0.415pf, g = 0.522, q = 127.7 for efficiency tuned devices at 18ghz: input matched for maximum gain & output load is: vd=12v, idq=45ma: rp = 67.0 w , cp = 0.503pf, g = 0.680, q = 123.0 vd=10v, idq=45ma: rp = 51.3 w , cp = 0.495pf, g = 0.619, q = 127.3 2 3 4 5 6 7 8 9 10 11 12 13 14 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 input power (dbm) gain (db) 10 14 18 22 26 30 34 38 42 46 50 54 pae (%) vd = 12v, id = 45ma vd = 10v, id = 45ma 10 12 14 16 18 20 22 24 26 28 30 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 input power (dbm) pout (dbm) 50 60 70 80 90 100 110 120 130 140 id (ma) vd = 12v, id = 45ma vd = 10v, id = 45ma 2 3 4 5 6 7 8 9 10 11 12 13 14 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 input power (dbm) gain (db) 10 13 16 19 22 25 28 31 34 37 40 43 46 pae (%) vd = 12v, id = 45ma vd = 10v, id = 45ma 10 12 14 16 18 20 22 24 26 28 30 32 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 input power (dbm) pout (dbm) 50 60 70 80 90 100 110 120 130 140 150 id (ma) vd = 12v, id = 45ma vd = 10v, id = 45ma
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 7 drain lg rg cdg rd ld rdg gate rgs cgs r i + v i - gm v i rds cds ls rs source source rp, cp TGF2022-06 linear model for 0.6 mm unit phemt cell model parameter vd = 8v idq = 45ma vd = 8v idq = 60ma vd = 8v idq = 75ma vd = 10v idq = 45ma vd = 10v idq = 60ma vd = 12v idq = 45ma units rg 0.22 0.23 0.24 0.23 0.24 0.24 w rs 0.40 0.41 0.41 0.46 0.45 0.50 w rd 0.51 0.52 0.52 0.50 0.50 0.48 w gm 0.195 0.202 0.202 0.188 0.195 0.183 s cgs 1.50 1.63 1.70 1.64 1.73 1.71 pf ri 1.65 1.59 1.58 1.72 1.64 1.73 w cds 0.115 0.115 0.116 0.114 0.115 0.114 pf rds 243.14 247.08 255.12 278.72 279.31 302.49 w cgd 0.072 0.066 0.063 0.064 0.061 0.060 pf tau 5.94 6.23 6.51 6.85 6.95 7.36 ps ls 0.001 0.001 0.001 0.001 0.001 0.001 nh lg 0.108 0.108 0.108 0.108 0.108 0.108 nh ld 0.121 0.120 0.118 0.118 0.118 0.117 nh rgs 5110 5140 8310 5110 5420 5120 w rgd 57700 64800 74400 79400 82900 82300 w upc = 0.6mm unit phemt cell gate source source drain upc l - via = 0.0135 nh (2x) 8qlws+(07fhoo 5hihuhqfh3odqh
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 8 TGF2022-06 unmatched s-parameters for 0.6 mm phemt bias conditions: vd = 12v, idq = 45ma frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (ghz) db deg db deg db deg db deg 0.5 -0.241 -36.34 22.678 159.08 -35.863 70.86 -2.990 -12.01 1 -0.419 -66.76 21.503 141.50 -31.020 55.18 -3.802 -21.21 1.5 -0.587 -89.70 20.058 128.01 -28.948 43.57 -4.700 -27.22 2 -0.712 -106.49 18.609 117.76 -27.903 35.20 -5.480 -31.06 2.5 -0.798 -118.92 17.260 109.77 -27.322 29.07 -6.093 -33.71 3 -0.857 -128.35 16.035 103.28 -26.972 24.45 -6.554 -35.80 3.5 -0.898 -135.70 14.930 97.82 -26.750 20.86 -6.896 -37.68 4 -0.928 -141.60 13.930 93.08 -26.602 17.99 -7.146 -39.51 4.5 -0.949 -146.44 13.022 88.85 -26.501 15.64 -7.327 -41.37 5 -0.964 -150.49 12.193 85.01 -26.430 13.67 -7.457 -43.31 5.5 -0.976 -153.95 11.432 81.46 -26.380 11.99 -7.547 -45.31 6 -0.985 -156.94 10.730 78.12 -26.345 10.54 -7.606 -47.40 6.5 -0.992 -159.58 10.079 74.97 -26.321 9.26 -7.641 -49.54 7 -0.997 -161.92 9.473 71.95 -26.305 8.13 -7.657 -51.75 7.5 -1.001 -164.03 8.905 69.05 -26.295 7.11 -7.657 -54.01 8 -1.004 -165.94 8.373 66.25 -26.290 6.19 -7.643 -56.31 8.5 -1.007 -167.69 7.872 63.52 -26.290 5.35 -7.618 -58.64 9 -1.008 -169.30 7.399 60.86 -26.293 4.59 -7.584 -61.01 9.5 -1.010 -170.80 6.950 58.25 -26.298 3.88 -7.541 -63.39 10 -1.010 -172.20 6.524 55.69 -26.307 3.22 -7.491 -65.79 10.5 -1.011 -173.52 6.119 53.18 -26.317 2.61 -7.435 -68.21 11 -1.011 -174.76 5.733 50.70 -26.328 2.04 -7.373 -70.63 11.5 -1.011 -175.94 5.363 48.25 -26.342 1.51 -7.306 -73.06 12 -1.010 -177.06 5.010 45.84 -26.357 1.01 -7.234 -75.49 12.5 -1.010 -178.13 4.670 43.44 -26.373 0.53 -7.158 -77.92 13 -1.009 -179.15 4.344 41.07 -26.390 0.09 -7.078 -80.35 13.5 -1.008 179.86 4.031 38.72 -26.408 -0.33 -6.995 -82.78 14 -1.007 178.91 3.728 36.39 -26.426 -0.72 -6.909 -85.19 14.5 -1.006 177.99 3.436 34.07 -26.446 -1.10 -6.819 -87.60 15 -1.004 177.10 3.154 31.77 -26.466 -1.45 -6.728 -90.00 15.5 -1.003 176.24 2.881 29.49 -26.486 -1.79 -6.633 -92.39 16 -1.001 175.40 2.616 27.21 -26.507 -2.10 -6.537 -94.76 16.5 -0.999 174.58 2.359 24.95 -26.529 -2.40 -6.439 -97.13 17 -0.998 173.79 2.109 22.70 -26.551 -2.69 -6.339 -99.48 17.5 -0.996 173.01 1.866 20.46 -26.572 -2.95 -6.238 -101.81 18 -0.994 172.24 1.629 18.23 -26.595 -3.21 -6.135 -104.13 18.5 -0.992 171.50 1.398 16.01 -26.617 -3.45 -6.031 -106.44 19 -0.989 170.76 1.173 13.79 -26.639 -3.67 -5.926 -108.72 19.5 -0.987 170.04 0.953 11.58 -26.661 -3.88 -5.820 -111.00 20 -0.985 169.34 0.737 9.38 -26.683 -4.08 -5.713 -113.25 20.5 -0.982 168.64 0.526 7.19 -26.705 -4.27 -5.606 -115.49 21 -0.980 167.96 0.319 5.00 -26.726 -4.45 -5.498 -117.71 21.5 -0.977 167.28 0.115 2.82 -26.748 -4.61 -5.390 -119.91 22 -0.975 166.61 -0.085 0.64 -26.769 -4.77 -5.281 -122.09 22.5 -0.972 165.96 -0.281 -1.53 -26.789 -4.91 -5.173 -124.26 23 -0.970 165.31 -0.475 -3.69 -26.809 -5.04 -5.064 -126.41 23.5 -0.967 164.67 -0.666 -5.85 -26.829 -5.17 -4.956 -128.54 24 -0.964 164.03 -0.854 -8.01 -26.848 -5.29 -4.848 -130.65 24.5 -0.961 163.41 -1.040 -10.16 -26.866 -5.39 -4.740 -132.75 25 -0.958 162.79 -1.224 -12.31 -26.884 -5.49 -4.632 -134.82 25.5 -0.955 162.18 -1.406 -14.45 -26.901 -5.58 -4.525 -136.88 26 -0.952 161.57 -1.586 -16.59 -26.917 -5.67 -4.419 -138.92
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 9 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handing, assembly and test. mechanical drawing TGF2022-06 1( 8qlwv ploolphwhuv lqfkhv 7klfnqhvv &klshgjhwrerqgsdgglphqvlrqvduhvkrzqwrfhqwhurierqgsdg &klsvl]hwrohudqfh *1',6%$&.6,'(2)00,& %rqgsdg 9j [ [ %rqgsdg 9g [ [ >@ >@ >@ >@ >@ >@ >@ >@
advance product information september 19, 2005 triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com 10 TGF2022-06 reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. assembly process notes
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